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first_img Cross-chain stablecoin bridge Cashmere announced its roadmap, which will launch Mountain and the token $CSM

Cross-chain stablecoin bridge Cashmere announces expansion plans, with the automated liquidity product Goat LP set to open to all users, followed by the launch of the main product Mountain and the token $CSM. Cashmere Bridge currently supports zero-slippage stablecoin transfers across 16 chains, and Goat Street features 6,666 goat NFTs on the Robinhood Chain. The team states that there is currently no official $CSM, and the related arrangements are part of the current plan and may change.Goat LP targets Uniswap v3 and v4 positions on the Robinhood Chain, with positions remaining in users' wallets as Uniswap NFTs. Automatic reinvestment incurs a 10% reinvestment fee, with Gas covered by the project team; automatic adjustment of ranges and automatic exits both incur a 0.15% fee. The official description refers to it as experimental software. The Mountain code has completed testing and will undergo external auditing before going live. Barn is a soulbound NFT with a maximum of 10 slots, and after issuance begins, new $CSM will be distributed every second. Goat NFTs can be permanently bound to receive issuance shares and cannot be sold or withdrawn after binding.The plan is to issue 1,000 founding Barns, with a guaranteed slot price of 0.125 ETH, whitelist at 0.25 ETH, and public auction prices dropping from 1.5 ETH to 0.25 ETH. $CSM will begin trading through the official Uniswap v4 ETH pool, while market making and tokens on Anvil have been canceled and redeployed due to technical issues. The maximum supply is planned at 666 million, with 10% allocated for official pool liquidity, 25% for the team and treasury with designated ownership, and 65% issued as the system operates. The team also plans to airdrop to Barn participants, Goat Street activators, and early users, with wallets that have listed goat NFTs on OpenSea being excluded.

first_img Samsung Electronics adjusts the next-generation DRAM roadmap, naming B1b as D0a

According to a report by ZDNet Korea, Samsung Electronics is adjusting its next-generation DRAM strategy by incorporating the previously project-based B1b into its official roadmap, naming it the first DRAM D0a below 10 nanometers. Previously, D0a referred to vertical transistor DRAM, and this product is now classified separately as D0a-V. This renaming aims to accelerate the introduction of advanced packaging in general DRAM.B1b will manufacture storage cells and peripheral driver circuits on different wafers before bonding them together, using wafer-to-wafer hybrid bonding and directly connecting through copper interconnects. The currently commercialized DRAM is 1c, which is the 6th generation 10 nanometer level, with a line width of about 11 to 12 nanometers; the next generation 1d is the 7th generation 10 nanometer level, with a line width of about 10 to 11 nanometers, considered effectively the last 10 nanometer level product, with the related line width being a marketing term rather than an actual physical size. Vertical transistors can arrange transistors within the cell vertically, reducing the cell area from 6F² to 4F², but they need to address high aspect ratio etching and leakage current, making development more challenging. Wafer-to-wafer hybrid bonding has already been mass-produced in CMOS image sensors and high-stacking NAND.Samsung Electronics is evaluating the use of B1b for the 8th generation high bandwidth memory HBM5. HBM5 is expected to be mass-produced around 2029, aiming to increase operating speed by more than 50% compared to HBM4E. Industry estimates suggest that D0a DRAM based on B1b will be commercially available in about two years, with specific mass production investment schedules likely to be determined by mid-next year.
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